Mitigating hydrogen-related instabilities in oxide thin-film transistor via nitrogen-engineered passivation layer for thermal stability
I.Sak Lee; Jae Won Na; Kyungmoon Kwak; Jong Bin An; Hyun Jae Kim
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Applied Surface Science Advances
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.apsadv.2025.100839
The original publisher provides the full text and its access options.
Cite this source
I.Sak Lee; Jae Won Na; Kyungmoon Kwak; Jong Bin An; Hyun Jae Kim. Mitigating hydrogen-related instabilities in oxide thin-film transistor via nitrogen-engineered passivation layer for thermal stability. Applied Surface Science Advances. 2025-09. https://doi.org/10.1016/j.apsadv.2025.100839