Scaled Dual‐Gate Indium–Gallium–Zinc Oxide Thin‐Film Transistor for Two Transistor‐Zero‐Capacitor Dynamic Random Access Memory
Kaifei Chen; Jiebin Niu; Guanhua Yang; Menggan Liu; Wendong Lu; Fuxi Liao; Xuanming Zhang; Zihan Li; Naide Mao; Kaiping Zhang; Congyan Lu; Di Geng; Nianduan Lu; Ling Li
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202500222
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Cite this source
Kaifei Chen; Jiebin Niu; Guanhua Yang; Menggan Liu; Wendong Lu; Fuxi Liao; Xuanming Zhang; Zihan Li; Naide Mao; Kaiping Zhang; Congyan Lu; Di Geng; Nianduan Lu; Ling Li. Scaled Dual‐Gate Indium–Gallium–Zinc Oxide Thin‐Film Transistor for Two Transistor‐Zero‐Capacitor Dynamic Random Access Memory. physica status solidi (a). 2025-05-26. https://doi.org/10.1002/pssa.202500222