Microgravity-activated high-performance van der Waals InSe ferroelectric semiconductor
Rong Jin; Fengrui Sui; Yilun Yu; Beituo Liu; Min Jin; Xuechao Liu; Jiawen Dai; Yufan Zheng; Shujing Jia; Ruijuan Qi; Fangyu Yue; Junhao Chu
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Nature Communications
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1038/s41467-026-70520-1
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Cite this source
Rong Jin; Fengrui Sui; Yilun Yu; Beituo Liu; Min Jin; Xuechao Liu; Jiawen Dai; Yufan Zheng; Shujing Jia; Ruijuan Qi; Fangyu Yue; Junhao Chu. Microgravity-activated high-performance van der Waals InSe ferroelectric semiconductor. Nature Communications. 2026-03-12. https://doi.org/10.1038/s41467-026-70520-1