A p-Si/n-ZnO heterojunction based bipolar transistor strain sensor enabled by bilateral polarization charge modulation
Yitong Wang; Fangpei Li; Wenbo Peng; Yongning He
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Applied Materials Today
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.apmt.2025.102832
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Cite this source
Yitong Wang; Fangpei Li; Wenbo Peng; Yongning He. A p-Si/n-ZnO heterojunction based bipolar transistor strain sensor enabled by bilateral polarization charge modulation. Applied Materials Today. 2025-08. https://doi.org/10.1016/j.apmt.2025.102832