Nanoscale characterisation of stress in Si nanowires for semiconductor qubit fabrication
Ginés González-Guirado; Vanessa Hinojosa-Chasiquiza; Julián Anaya; Jordi Antoja-Lleonart; Jordi Llobet; Alberto del Moral; Albert Guerrero; Olga Muntada; Teresa Elenes-Cervantes; Joan Bausells; Juan Jiménez; Jorge Souto; Francesc Pérez-Murano; Jose Luis Pura
- Published
- Publisher
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
- Journal / collection
- Light: Advanced Manufacturing
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.37188/lam.2026.124
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Cite this source
Ginés González-Guirado; Vanessa Hinojosa-Chasiquiza; Julián Anaya; Jordi Antoja-Lleonart; Jordi Llobet; Alberto del Moral; Albert Guerrero; Olga Muntada; Teresa Elenes-Cervantes; Joan Bausells; Juan Jiménez; Jorge Souto; Francesc Pérez-Murano; Jose Luis Pura. Nanoscale characterisation of stress in Si nanowires for semiconductor qubit fabrication. Light: Advanced Manufacturing. 2026. https://doi.org/10.37188/lam.2026.124