Strategical dynamic modulation of turn-on voltage for write transistor introducing charge-trap layer in 2T0C DRAM cell employing IGZO channel
Kyung Min Kim; Sang Han Ko; Sung Min Yoon
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Journal of Semiconductors
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1674-4926/25050019
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Cite this source
Kyung Min Kim; Sang Han Ko; Sung Min Yoon. Strategical dynamic modulation of turn-on voltage for write transistor introducing charge-trap layer in 2T0C DRAM cell employing IGZO channel. Journal of Semiconductors. 2026-02-01. https://doi.org/10.1088/1674-4926/25050019