P-Type Poly-Silicon Gate-All-Around Junctionless Nanowire Transistor for Multi-State One-Time Programmable Memory
Chen-Feng Chang; Zong-Han Lu; Chieh Lo; Dong-Ru Hsieh; Feng-Shuo Zhang; Chan-Yi Tsai; Meng-Lin Wu; Tien-Sheng Chao
- Published
- Publisher
- The Electrochemical Society
- Journal / collection
- ECS Journal of Solid State Science and Technology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1149/2162-8777/ae0bf5
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Cite this source
Chen-Feng Chang; Zong-Han Lu; Chieh Lo; Dong-Ru Hsieh; Feng-Shuo Zhang; Chan-Yi Tsai; Meng-Lin Wu; Tien-Sheng Chao. P-Type Poly-Silicon Gate-All-Around Junctionless Nanowire Transistor for Multi-State One-Time Programmable Memory. ECS Journal of Solid State Science and Technology. 2025-10-01. https://doi.org/10.1149/2162-8777/ae0bf5