Silicon-based Fin Field-Effect Transistor (Si-FinFET) Optimisation Based on Gate Length and Operating Temperature
Yousif Atalla; Mohamad Hafiz Mamat; Yasir Hashim
- Published
- Publisher
- Universiti Putra Malaysia
- Journal / collection
- Pertanika Journal of Science and Technology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.47836/pjst.34.3.07
The original publisher provides the full text and its access options.
Cite this source
Yousif Atalla; Mohamad Hafiz Mamat; Yasir Hashim. Silicon-based Fin Field-Effect Transistor (Si-FinFET) Optimisation Based on Gate Length and Operating Temperature. Pertanika Journal of Science and Technology. 2026-06-25. https://doi.org/10.47836/pjst.34.3.07