A Schottky barrier field-effect transistor platform with variable Ge content on SOI
Andreas Fuchsberger; Lukas Wind; Aníbal Pacheco-Sanchez; Johannes Aberl; Moritz Brehm; Lilian Vogl; Peter Schweizer; Masiar Sistani; Walter M. Weber
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Solid-State Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.sse.2025.109221
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Cite this source
Andreas Fuchsberger; Lukas Wind; Aníbal Pacheco-Sanchez; Johannes Aberl; Moritz Brehm; Lilian Vogl; Peter Schweizer; Masiar Sistani; Walter M. Weber. A Schottky barrier field-effect transistor platform with variable Ge content on SOI. Solid-State Electronics. 2025-12. https://doi.org/10.1016/j.sse.2025.109221