Highly stackable Oxide-semiconductor Channel Transistor Technology for Future High-density and Low-power 3D DRAM
Mutsumi Okajima; Takamitsu Ochi; Tsuyoshi Sugisaki; Takanori Akita; Fumiya Kimura; Kiichi Sato; Isamu Ujiie; Sota Mochizuki; Masayoshi Iwayama; Atsuko Sakata; Shinji Miyano; Kazuki Eshiro; Takafumi Masuda; Tomomasa Ueda; Nobuyoshi Saito; Keiji Ikeda
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE International Electron Devices Meeting (IEDM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iedm50572.2025.11353893
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Mutsumi Okajima; Takamitsu Ochi; Tsuyoshi Sugisaki; Takanori Akita; Fumiya Kimura; Kiichi Sato; Isamu Ujiie; Sota Mochizuki; Masayoshi Iwayama; Atsuko Sakata; Shinji Miyano; Kazuki Eshiro; Takafumi Masuda; Tomomasa Ueda; Nobuyoshi Saito; Keiji Ikeda. Highly stackable Oxide-semiconductor Channel Transistor Technology for Future High-density and Low-power 3D DRAM. 2025 IEEE International Electron Devices Meeting (IEDM). 2025-12-06. https://doi.org/10.1109/iedm50572.2025.11353893