Study on irradiation effects and degradation model of bipolar junction transistor under severe-accident conditions in nuclear power plants
Ducheng Lv; Yiding Gao; Shiliang Zhou
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Progress in Nuclear Energy
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.pnucene.2026.106489
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Cite this source
Ducheng Lv; Yiding Gao; Shiliang Zhou. Study on irradiation effects and degradation model of bipolar junction transistor under severe-accident conditions in nuclear power plants. Progress in Nuclear Energy. 2026-09. https://doi.org/10.1016/j.pnucene.2026.106489