Normally‐off top‐gate self‐aligned field‐effect transistor using crystal InO x with field‐effect mobility of around 100 cm 2 /vs
Yukinori Shima; Norihiko Seo; Masami Jincho; Chieko Misawa; Marie Matsumoto; Masahiro Watanabe; Kayo Kumakura; Yasutaka Nakazawa; Junichi Koezuka; Motoharu Saito; Koji Kusunoki; Satoshi Seo; Shunpei Yamazaki
- Published
- Publisher
- Wiley
- Journal / collection
- Journal of the Society for Information Display
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/jsid.2059
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Cite this source
Yukinori Shima; Norihiko Seo; Masami Jincho; Chieko Misawa; Marie Matsumoto; Masahiro Watanabe; Kayo Kumakura; Yasutaka Nakazawa; Junichi Koezuka; Motoharu Saito; Koji Kusunoki; Satoshi Seo; Shunpei Yamazaki. Normally‐off top‐gate self‐aligned field‐effect transistor using crystal InO x with field‐effect mobility of around 100 cm 2 /vs. Journal of the Society for Information Display. 2025-04-03. https://doi.org/10.1002/jsid.2059