Drain Work-Function-Engineered Electrically Doped PNPN Tunnel Field-Effect Transistor for Ambipolar Current Suppression
Wen-Bin Xu; Ying Liu; Tin Tin Ting
- Published
- Publisher
- Pleiades Publishing Ltd
- Journal / collection
- Semiconductors
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1134/s1063782625604091
The original publisher provides the full text and its access options.
Cite this source
Wen-Bin Xu; Ying Liu; Tin Tin Ting. Drain Work-Function-Engineered Electrically Doped PNPN Tunnel Field-Effect Transistor for Ambipolar Current Suppression. Semiconductors. 2026-04. https://doi.org/10.1134/s1063782625604091