Site-Selective Excitation of Defects Promotes Ultrafast Hot-Electron Transfer at the Semiconductor Interface
Tianjun Wang; Kaiping Wang; Huizhi Xie; Wei Chen; Yajie Gao; Shucai Xia; Haochen Wang; Bo Wen; Zefeng Ren; Annabella Selloni; Xueming Yang; Chuanyao Zhou
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- Journal of the American Chemical Society
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/jacs.5c18179
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Cite this source
Tianjun Wang; Kaiping Wang; Huizhi Xie; Wei Chen; Yajie Gao; Shucai Xia; Haochen Wang; Bo Wen; Zefeng Ren; Annabella Selloni; Xueming Yang; Chuanyao Zhou. Site-Selective Excitation of Defects Promotes Ultrafast Hot-Electron Transfer at the Semiconductor Interface. Journal of the American Chemical Society. 2026-02-10. https://doi.org/10.1021/jacs.5c18179