Junction-All-Around WSe 2 /β-Ga 2 O 3 p-n Heterojunction Transistor with Ultra-High Mobility Enabling NDR-Based Multilevel Logic and Memory
Junghun Kim; Jihyun Kim; Dongryul Lee
- Published
- Publisher
- The Electrochemical Society
- Journal / collection
- ECS Meeting Abstracts
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1149/ma2026-01331498mtgabs
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Cite this source
Junghun Kim; Jihyun Kim; Dongryul Lee. Junction-All-Around WSe 2 /β-Ga 2 O 3 p-n Heterojunction Transistor with Ultra-High Mobility Enabling NDR-Based Multilevel Logic and Memory. ECS Meeting Abstracts. 2026-07-07. https://doi.org/10.1149/ma2026-01331498mtgabs