Fluctuation-Induced Tunneling Conduction: A Universal Model for Temperature-Dependent Transport in Oxide Semiconductor Transistors
Ke Hu; Jiawei Wang; Ling Li
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2026.3659878
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Cite this source
Ke Hu; Jiawei Wang; Ling Li. Fluctuation-Induced Tunneling Conduction: A Universal Model for Temperature-Dependent Transport in Oxide Semiconductor Transistors. IEEE Electron Device Letters. 2026-04. https://doi.org/10.1109/led.2026.3659878