Designing atomic-scale transistor in topological insulators through vacancy-induced localized modes
Cunyuan Jiang
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Journal of Physics: Condensed Matter
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1361-648x/ae096e
The original publisher provides the full text and its access options.
Cite this source
Cunyuan Jiang. Designing atomic-scale transistor in topological insulators through vacancy-induced localized modes. Journal of Physics: Condensed Matter. 2025-09-30. https://doi.org/10.1088/1361-648x/ae096e