Dynamic Monolayer WSe 2 Electrolyte‐Gated Transistor with Coexistent Double Relaxation Timescale for Enhanced Physical Reservoir Computing
Dongdong Sun; Ao Li; Xinyang Deng; Shaofan Zhao; Zitian Xu; Qinghai Tan; Yi Wan; Xiangdong Li; Shaochuan Chen; Ilia Valov; Yuanyuan Shi
- Published
- Publisher
- Wiley
- Journal / collection
- Small
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/smll.202504066
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Cite this source
Dongdong Sun; Ao Li; Xinyang Deng; Shaofan Zhao; Zitian Xu; Qinghai Tan; Yi Wan; Xiangdong Li; Shaochuan Chen; Ilia Valov; Yuanyuan Shi. Dynamic Monolayer WSe 2 Electrolyte‐Gated Transistor with Coexistent Double Relaxation Timescale for Enhanced Physical Reservoir Computing. Small. 2025-06-25. https://doi.org/10.1002/smll.202504066