Quantum simulation of spin tunneling field-effect transistor based on antimonene
Hossein N. Niknezhad; Shoeib Babaee Touski
- Published
- Publisher
- American Physical Society (APS)
- Journal / collection
- Physical Review B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1103/6xkp-h3wl
The original publisher provides the full text and its access options.
Cite this source
Hossein N. Niknezhad; Shoeib Babaee Touski. Quantum simulation of spin tunneling field-effect transistor based on antimonene. Physical Review B. 2025-06-23. https://doi.org/10.1103/6xkp-h3wl