Bulk and surface recombination of carriers in SiC and related wide band gap semiconductor materials
Masashi Kato
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Japanese Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1347-4065/adda80
The original publisher provides the full text and its access options.
Cite this source
Masashi Kato. Bulk and surface recombination of carriers in SiC and related wide band gap semiconductor materials. Japanese Journal of Applied Physics. 2025-06-01. https://doi.org/10.35848/1347-4065/adda80