Metal-Induced Oxygen Vacancy Control in InGaZnO/Hf 0.5 Zr 0.5 O 2 Ferroelectric Field-Effect Transistor Arrays for Simultaneous Improvement of Memory Window and Electrical Stability
Jae Seong Han; Kyungmoon Kwak; Subi Choi; Ju Hyun Lee; Nam Su Heo; Kunho Moon; Hyun Jae Kim
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Nano
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsnano.5c14197
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Cite this source
Jae Seong Han; Kyungmoon Kwak; Subi Choi; Ju Hyun Lee; Nam Su Heo; Kunho Moon; Hyun Jae Kim. Metal-Induced Oxygen Vacancy Control in InGaZnO/Hf 0.5 Zr 0.5 O 2 Ferroelectric Field-Effect Transistor Arrays for Simultaneous Improvement of Memory Window and Electrical Stability. ACS Nano. 2026-01-07. https://doi.org/10.1021/acsnano.5c14197