Design Principles for Metal-Oxide-Semiconductor Structures for Vertical GaN Power Devices (Invited)
T. Narita; K. Ito; H. Iguchi; D. Kikuta; S. Iwasaki; K. Kataoka; M. Kanechika; E. Kano; N. Ikarashi; K. Tomita; M. Horita; J. Suda; T. Kachi
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 IEEE International Reliability Physics Symposium (IRPS)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/irps61424.2026.11499359
The original publisher provides the full text and its access options.
Cite this source
T. Narita; K. Ito; H. Iguchi; D. Kikuta; S. Iwasaki; K. Kataoka; M. Kanechika; E. Kano; N. Ikarashi; K. Tomita; M. Horita; J. Suda; T. Kachi. Design Principles for Metal-Oxide-Semiconductor Structures for Vertical GaN Power Devices (Invited). 2026 IEEE International Reliability Physics Symposium (IRPS). 2026-03-22. https://doi.org/10.1109/irps61424.2026.11499359