100 nm Gate-Length N-Polar GaN/AlGaN Metal-Oxide-Semiconductor High Electron Mobility Transistor on a Si Substrate via Thin-Layer Transfer Technique
Hu Wei; Gaofeng Dong; Jiaqi He; Zhaofeng Wang; Mei Xu; Zhengyuan Li; Hanghai Du; Weichuan Xing; Zhihong Liu; Yue Hao; Jincheng Zhang
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Nanotechnology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1361-6528/aea85c
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Cite this source
Hu Wei; Gaofeng Dong; Jiaqi He; Zhaofeng Wang; Mei Xu; Zhengyuan Li; Hanghai Du; Weichuan Xing; Zhihong Liu; Yue Hao; Jincheng Zhang. 100 nm Gate-Length N-Polar GaN/AlGaN Metal-Oxide-Semiconductor High Electron Mobility Transistor on a Si Substrate via Thin-Layer Transfer Technique. Nanotechnology. 2026-09-16. https://doi.org/10.1088/1361-6528/aea85c