Evaluation of Si thin film formed from Si0.7Ge0.3/Si/Si0.7Ge0.3-stacked layers with CF4/H2 plasma for Si-nanosheet formation toward GAA transistor application
Kotaro Ozaki; Yusuke Imai; Yuki Imai; Takayoshi Tsutsumi; Kenji Ishikawa; Yuji Yamamoto; Wei-Chen Wen; Ibuki Saburi; Katsunori Makihara
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0315151
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Cite this source
Kotaro Ozaki; Yusuke Imai; Yuki Imai; Takayoshi Tsutsumi; Kenji Ishikawa; Yuji Yamamoto; Wei-Chen Wen; Ibuki Saburi; Katsunori Makihara. Evaluation of Si thin film formed from Si0.7Ge0.3/Si/Si0.7Ge0.3-stacked layers with CF4/H2 plasma for Si-nanosheet formation toward GAA transistor application. Applied Physics Letters. 2026-05-25. https://doi.org/10.1063/5.0315151