AlGaN/GaN High electron Mobility Transistor (HEMT) based radio frequency power amplifiers for future wireless communication transmitters: Exciting prospects and challenges
J. Ajayan; S. Sreejith
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Microelectronic Engineering
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mee.2025.112342
The original publisher provides the full text and its access options.
Cite this source
J. Ajayan; S. Sreejith. AlGaN/GaN High electron Mobility Transistor (HEMT) based radio frequency power amplifiers for future wireless communication transmitters: Exciting prospects and challenges. Microelectronic Engineering. 2025-09. https://doi.org/10.1016/j.mee.2025.112342