Electronic Response of a Gate-All-Around Field Effect Transistor with Two Silicon Nanowires as Active Channels within the Same Insulator Matrix
Reza Nekovei; Amit Verma
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE 15th International Conference Nanomaterials: Applications & Properties (NAP)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/nap68437.2025.11216286
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Cite this source
Reza Nekovei; Amit Verma. Electronic Response of a Gate-All-Around Field Effect Transistor with Two Silicon Nanowires as Active Channels within the Same Insulator Matrix. 2025 IEEE 15th International Conference Nanomaterials: Applications & Properties (NAP). 2025-09-07. https://doi.org/10.1109/nap68437.2025.11216286