Graphene/hBN–based valley transistor: Dynamic control of valley current in synchronized nonzero voltages within the time-dependent regime
A. Belayadi; C. I. Osuala; I. Assi; N. A. Hadadi; J. P. F. LeBlanc; A. Abbout
- Published
- Publisher
- American Physical Society (APS)
- Journal / collection
- Physical Review B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1103/ns2x-rfcf
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Cite this source
A. Belayadi; C. I. Osuala; I. Assi; N. A. Hadadi; J. P. F. LeBlanc; A. Abbout. Graphene/hBN–based valley transistor: Dynamic control of valley current in synchronized nonzero voltages within the time-dependent regime. Physical Review B. 2025-10-08. https://doi.org/10.1103/ns2x-rfcf