p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications
Mohit Kumar; Timothée Labau; Laurent Xu; Joelle Zgheib; René Escoffier; Julien Buckley
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Scientific Reports
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1038/s41598-025-20675-6
The original publisher provides the full text and its access options.
Cite this source
Mohit Kumar; Timothée Labau; Laurent Xu; Joelle Zgheib; René Escoffier; Julien Buckley. p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications. Scientific Reports. 2025-10-21. https://doi.org/10.1038/s41598-025-20675-6