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Research literature / Conference paper

A Physics-Based Program-Retention Joint Model of Charge-Trap Transistor

Yi Xiao; Haozhang Yang; Jiaqi Li; Chenglin Ye; Nan Tang; YongJia Wang; Zheng Zhou; Xiaoyan Liu; Jinfeng Kang; Peng Huang

Published
Publisher
IEEE
Journal / collection
2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/sispad66650.2025.11186318

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Yi Xiao; Haozhang Yang; Jiaqi Li; Chenglin Ye; Nan Tang; YongJia Wang; Zheng Zhou; Xiaoyan Liu; Jinfeng Kang; Peng Huang. A Physics-Based Program-Retention Joint Model of Charge-Trap Transistor. 2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). 2025-09-24. https://doi.org/10.1109/sispad66650.2025.11186318

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