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Research literature / Preprint / posted paper

Causes and improvement measures of the lateral-burr defect in stamped power-semiconductor leadframes

Heng-Sheng Lin; Chuan-Hsi Hung; Ian Hu; Rui-Feng Chen; Jyun-Wei Huang

Published
Publisher
Springer Science and Business Media LLC
Research area
Semiconductors
Source type
Preprint / posted paper
DOI
10.21203/rs.3.rs-7564482/v1

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Heng-Sheng Lin; Chuan-Hsi Hung; Ian Hu; Rui-Feng Chen; Jyun-Wei Huang. Causes and improvement measures of the lateral-burr defect in stamped power-semiconductor leadframes. Springer Science and Business Media LLC. 2025-09-18. https://doi.org/10.21203/rs.3.rs-7564482/v1

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