High power operating neuromorphic transistor based on F-doped β-Ga2O3 channel on Si wafers
Jisu Kim; Ashish Kumar; Junmo Kim; Hayoung Park; Suwan Lee; Rana Basit Ali; Hyungtak Seo
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Journal of Alloys and Compounds
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.jallcom.2025.183267
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Cite this source
Jisu Kim; Ashish Kumar; Junmo Kim; Hayoung Park; Suwan Lee; Rana Basit Ali; Hyungtak Seo. High power operating neuromorphic transistor based on F-doped β-Ga2O3 channel on Si wafers. Journal of Alloys and Compounds. 2025-09. https://doi.org/10.1016/j.jallcom.2025.183267