P‐7.12: High on‐off ratio and Stability Indium Oxide Thin‐film Transistor with Praseodymium and Hetero‐valence molybdenum doping
Honglong Ning; Yuexin Yang; Han Li; Hua Zheng; Xiaoqin Wei; Shaojie Jin; Weixin Cheng; Jiahao Zheng; Rihui Yao; Junbiao Peng
- Published
- Publisher
- Wiley
- Journal / collection
- SID Symposium Digest of Technical Papers
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/sdtp.19045
The original publisher provides the full text and its access options.
Cite this source
Honglong Ning; Yuexin Yang; Han Li; Hua Zheng; Xiaoqin Wei; Shaojie Jin; Weixin Cheng; Jiahao Zheng; Rihui Yao; Junbiao Peng. P‐7.12: High on‐off ratio and Stability Indium Oxide Thin‐film Transistor with Praseodymium and Hetero‐valence molybdenum doping. SID Symposium Digest of Technical Papers. 2025-06. https://doi.org/10.1002/sdtp.19045