A One-Transistor DRAM Memory Cell Using HfO 2 -Based Ferroelectric-Assisted Charge Trapping Concept
Mingkai Bai; Xiaoqing Sun; Runhao Han; Yajing Ding; Tao Hu; Yuanyuan Zhao; Saifei Dai; Kai Han; Junshuai Chai; Hao Xu; Xiaolei Wang; Wenwu Wang; Tianchun Ye
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3560595
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Cite this source
Mingkai Bai; Xiaoqing Sun; Runhao Han; Yajing Ding; Tao Hu; Yuanyuan Zhao; Saifei Dai; Kai Han; Junshuai Chai; Hao Xu; Xiaolei Wang; Wenwu Wang; Tianchun Ye. A One-Transistor DRAM Memory Cell Using HfO 2 -Based Ferroelectric-Assisted Charge Trapping Concept. IEEE Transactions on Electron Devices. 2025-06. https://doi.org/10.1109/ted.2025.3560595