Novel “S-Cut” Flows for Highly Uniform Multi-Tier Integrated Oxide Semiconductor DRAM
Ziheng Bai; Hao Shi; Zhou He; Zhao Liu; Jianqi Chen; Zhiyu Tian; Huan Liu; Jiahan Ke; Jiajia Wu; Gangping Yan; Wenjun Chen; Zehuan Hei; Tongshang Su; Baodong Han; Xueli Ma; Xiangsheng Wang; Yuke Li; Jinjuan Xiang; Weihan Fan; Hongbo Sun
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 IEEE International Memory Workshop (IMW)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/imw68301.2026.11532897
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Ziheng Bai; Hao Shi; Zhou He; Zhao Liu; Jianqi Chen; Zhiyu Tian; Huan Liu; Jiahan Ke; Jiajia Wu; Gangping Yan; Wenjun Chen; Zehuan Hei; Tongshang Su; Baodong Han; Xueli Ma; Xiangsheng Wang; Yuke Li; Jinjuan Xiang; Weihan Fan; Hongbo Sun. Novel “S-Cut” Flows for Highly Uniform Multi-Tier Integrated Oxide Semiconductor DRAM. 2026 IEEE International Memory Workshop (IMW). 2026-05-10. https://doi.org/10.1109/imw68301.2026.11532897