GaN High-Electron-Mobility Transistor with Floating Gate for Accurate Threshold Voltage Control
Hayato Kosaka; Hiroki Iwata; Riichiro Shirota; Yoshiteru Amemiya; Shinichiro Takatani; Tomoyuki Suwa; Akinobu Teramoto
- Published
- Publisher
- The Electrochemical Society
- Journal / collection
- ECS Journal of Solid State Science and Technology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1149/2162-8777/ae4828
The original publisher provides the full text and its access options.
Cite this source
Hayato Kosaka; Hiroki Iwata; Riichiro Shirota; Yoshiteru Amemiya; Shinichiro Takatani; Tomoyuki Suwa; Akinobu Teramoto. GaN High-Electron-Mobility Transistor with Floating Gate for Accurate Threshold Voltage Control. ECS Journal of Solid State Science and Technology. 2026-03-01. https://doi.org/10.1149/2162-8777/ae4828