Development of the self-aligned top-gate MoS2 transistor with the recorded radiation tolerance
Lingyu Zhang; Yifu Sun; Kaiyue He; Ruhai Liu; Dong Zhang; Peng Lu; Maguang Zhu
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0290712
The original publisher provides the full text and its access options.
Cite this source
Lingyu Zhang; Yifu Sun; Kaiyue He; Ruhai Liu; Dong Zhang; Peng Lu; Maguang Zhu. Development of the self-aligned top-gate MoS2 transistor with the recorded radiation tolerance. Applied Physics Letters. 2025-09-22. https://doi.org/10.1063/5.0290712