Evaluation of Radiation Hardness of Hydrogen‐Terminated Diamond Metal‐Oxide‐Semiconductor Field‐Effect Transistors With Ion‐Implanted Buried p + Electrodes
Sakura Uehara; Yuhei Seki; Yasushi Hoshino; Hitoshi Umezawa; Junichi H. Kaneko
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.70521
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Cite this source
Sakura Uehara; Yuhei Seki; Yasushi Hoshino; Hitoshi Umezawa; Junichi H. Kaneko. Evaluation of Radiation Hardness of Hydrogen‐Terminated Diamond Metal‐Oxide‐Semiconductor Field‐Effect Transistors With Ion‐Implanted Buried p + Electrodes. physica status solidi (a). 2026-09-09. https://doi.org/10.1002/pssa.70521