Development of an analysis capacity model for high electron mobility transistor AlGaN/GaN
Azzeddine Farti; Abdelkader Touhami
- Published
- Publisher
- Institute of Advanced Engineering and Science
- Journal / collection
- Indonesian Journal of Electrical Engineering and Computer Science
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.11591/ijeecs.v40.i3.pp1261-1269
The original publisher provides the full text and its access options.
Cite this source
Azzeddine Farti; Abdelkader Touhami. Development of an analysis capacity model for high electron mobility transistor AlGaN/GaN. Indonesian Journal of Electrical Engineering and Computer Science. 2025-12-01. https://doi.org/10.11591/ijeecs.v40.i3.pp1261-1269