Oxide-channel ferroelectric transistor enables ultralow-power NAND flash technology
Yuhan Hu; Liang Chu
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Science China Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s40843-026-4023-8
The original publisher provides the full text and its access options.
Cite this source
Yuhan Hu; Liang Chu. Oxide-channel ferroelectric transistor enables ultralow-power NAND flash technology. Science China Materials. 2026-03-02. https://doi.org/10.1007/s40843-026-4023-8