In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation
Been Kwak; Ryun‐Han Koo; Youngchan Cho; Changhyeon Han; Dongbin Kim; Soi Jeong; Yunho Shin; Joonhyeok Choi; Jiseong Im; Jonghyun Ko; Jong‐Ho Lee; Jangsaeng Kim; Youngho Kang; Wonjun Shin; Daewoong Kwon
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Functional Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/adfm.202522351
The original publisher provides the full text and its access options.
Cite this source
Been Kwak; Ryun‐Han Koo; Youngchan Cho; Changhyeon Han; Dongbin Kim; Soi Jeong; Yunho Shin; Joonhyeok Choi; Jiseong Im; Jonghyun Ko; Jong‐Ho Lee; Jangsaeng Kim; Youngho Kang; Wonjun Shin; Daewoong Kwon. In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation. Advanced Functional Materials. 2025-12-29. https://doi.org/10.1002/adfm.202522351