Dual-gate Ion-Sensitive Ferroelectric Field-Effect Transistor with Ultra-High Sensitivity >1000 mV/pH and Low Operation Voltage <3 V
Zikang Yao; Danyang Chen; Mengwei Si; Longchun Wang; Xiaojun Guo; Jingquan Liu; Wei Tang; Xiuyan Li
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE International Electron Devices Meeting (IEDM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iedm50572.2025.11353521
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Cite this source
Zikang Yao; Danyang Chen; Mengwei Si; Longchun Wang; Xiaojun Guo; Jingquan Liu; Wei Tang; Xiuyan Li. Dual-gate Ion-Sensitive Ferroelectric Field-Effect Transistor with Ultra-High Sensitivity >1000 mV/pH and Low Operation Voltage <3 V. 2025 IEEE International Electron Devices Meeting (IEDM). 2025-12-06. https://doi.org/10.1109/iedm50572.2025.11353521