Electrical Properties of H‐Diamond Field Effect Transistor With ZrO 2 /HfO 2 Stacked‐Gate Deposited by Electron Beam
Fei Wang; Wei Wang; GenQiang Chen; Zhangcheng Liu; WenBo Hu; HongXing Wang
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.70471
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Cite this source
Fei Wang; Wei Wang; GenQiang Chen; Zhangcheng Liu; WenBo Hu; HongXing Wang. Electrical Properties of H‐Diamond Field Effect Transistor With ZrO 2 /HfO 2 Stacked‐Gate Deposited by Electron Beam. physica status solidi (a). 2026-08-07. https://doi.org/10.1002/pssa.70471