Nanostructured h-WO 3 -Based Ionologic Gates with Enhanced Rectification and Transistor Functionality
Ahmed Bahrawy; Przemyslaw Galek; Christin Gellrich; Nick Niese; Mohamed A. A. Mohamed; Martin Hantusch; Julia Grothe; Stefan Kaskel
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Nano
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsnano.5c02035
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Cite this source
Ahmed Bahrawy; Przemyslaw Galek; Christin Gellrich; Nick Niese; Mohamed A. A. Mohamed; Martin Hantusch; Julia Grothe; Stefan Kaskel. Nanostructured h-WO 3 -Based Ionologic Gates with Enhanced Rectification and Transistor Functionality. ACS Nano. 2025-05-26. https://doi.org/10.1021/acsnano.5c02035