Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Conference paper

Monolithic 3D Stackable DRAM Design with BEOL-Compatible Oxide Channel Access Transistor

Po-Kai Hsu; Sungwon Cho; Janak Sharda; Hyeonwoo Park; Suman Datta; Shimeng Yu

Published
Publisher
IEEE
Journal / collection
2025 IEEE International Memory Workshop (IMW)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/imw61990.2025.11026931

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Po-Kai Hsu; Sungwon Cho; Janak Sharda; Hyeonwoo Park; Suman Datta; Shimeng Yu. Monolithic 3D Stackable DRAM Design with BEOL-Compatible Oxide Channel Access Transistor. 2025 IEEE International Memory Workshop (IMW). 2025-05-18. https://doi.org/10.1109/imw61990.2025.11026931

Download RIS