Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor
Yosuke Sasama; Takuya Iwasaki; Masataka Imura; Kenji Watanabe; Takashi Taniguchi; Yamaguchi Takahide
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0272041
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Cite this source
Yosuke Sasama; Takuya Iwasaki; Masataka Imura; Kenji Watanabe; Takashi Taniguchi; Yamaguchi Takahide. Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor. Applied Physics Letters. 2025-10-06. https://doi.org/10.1063/5.0272041