Effects of defects and dopants on p -type selenium-doped amorphous tellurium oxide: Electronic structure and transistor performance from multiscale modeling
Kuan-Rong Hao; Xinhe Wang; Zhaoqiang Bai; Jun Deng; Qing-Bo Yan; Guilei Wang; Chao Zhao
- Published
- Publisher
- American Physical Society (APS)
- Journal / collection
- Physical Review Applied
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1103/physrevapplied.23.054072
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Cite this source
Kuan-Rong Hao; Xinhe Wang; Zhaoqiang Bai; Jun Deng; Qing-Bo Yan; Guilei Wang; Chao Zhao. Effects of defects and dopants on p -type selenium-doped amorphous tellurium oxide: Electronic structure and transistor performance from multiscale modeling. Physical Review Applied. 2025-05-27. https://doi.org/10.1103/physrevapplied.23.054072