Advanced Modeling Line Edge Roughness and Line Width Roughness in Semiconductor Nanofabrication
Mikhail S. Kulpinov; Victoria V. Loseva; Dmitry A. Bulakh; Andrey V. Korshunov; Tatiana Yu. Krupkina; Vladimir V. Losev
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 IEEE Ural-Siberian Conference on Biomedical Engineering, Radioelectronics and Information Technology (USBEREIT)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/usbereit70063.2026.11581127
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Cite this source
Mikhail S. Kulpinov; Victoria V. Loseva; Dmitry A. Bulakh; Andrey V. Korshunov; Tatiana Yu. Krupkina; Vladimir V. Losev. Advanced Modeling Line Edge Roughness and Line Width Roughness in Semiconductor Nanofabrication. 2026 IEEE Ural-Siberian Conference on Biomedical Engineering, Radioelectronics and Information Technology (USBEREIT). 2026-05-14. https://doi.org/10.1109/usbereit70063.2026.11581127