A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films
Manuel Fregolent; Simranjit Singh; Shun Lu; Hirotaka Watanabe; Jia Wang; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini; Yoshio Honda; Hiroshi Amano; Biplab Sarkar
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Japanese Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1347-4065/ae23d6
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Manuel Fregolent; Simranjit Singh; Shun Lu; Hirotaka Watanabe; Jia Wang; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini; Yoshio Honda; Hiroshi Amano; Biplab Sarkar. A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films. Japanese Journal of Applied Physics. 2025-12-01. https://doi.org/10.35848/1347-4065/ae23d6