Low-Temperature Monolithic Integration of a Polycrystalline Silicon Ferroelectric-Gate Field-Effect Transistor with Microwave-Annealed HfZrO x for Energy-Efficient Neuromorphic Computing
Sang Woo Kim; Been Kwak; Hyun-Min Kim; Sangeun Kwak; Daewoong Kwon
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Materials Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsmaterialslett.5c01261
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Sang Woo Kim; Been Kwak; Hyun-Min Kim; Sangeun Kwak; Daewoong Kwon. Low-Temperature Monolithic Integration of a Polycrystalline Silicon Ferroelectric-Gate Field-Effect Transistor with Microwave-Annealed HfZrO x for Energy-Efficient Neuromorphic Computing. ACS Materials Letters. 2026-07-21. https://doi.org/10.1021/acsmaterialslett.5c01261