High Sensitivity pH Sensor Overcoming the Nernst Limit using the Silicon-on-Insulator Tunneling Field-Effect-Transistor Structure
Xingcong Chen; Junkang Li; Rui Zhang
- Published
- Publisher
- The Japan Society of Applied Physics
- Journal / collection
- Extended Abstracts of the 2025 International Conference on Solid State Devices and Materials
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.7567/ssdm.2025.f-5-04
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Cite this source
Xingcong Chen; Junkang Li; Rui Zhang. High Sensitivity pH Sensor Overcoming the Nernst Limit using the Silicon-on-Insulator Tunneling Field-Effect-Transistor Structure. Extended Abstracts of the 2025 International Conference on Solid State Devices and Materials. 2025-09-18. https://doi.org/10.7567/ssdm.2025.f-5-04